Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures
Résumé
We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-Branch Junctions
(YBJS).