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Article Dans Une Revue Journal of Applied Physics Année : 2005

Dielectric characterization in a broad frequency and temperature range of SrBi2Nb2O9 thin films grown on Pt electrodes

Maryline Guilloux-Viry
  • Fonction : Auteur
  • PersonId : 848832
Jean-René Duclere
  • Fonction : Auteur
  • PersonId : 963883
A. Rousseau
  • Fonction : Auteur
A. Perrin
  • Fonction : Auteur
Caroline Soyer
Denis Remiens
D. Fasquelle
  • Fonction : Auteur
  • PersonId : 1044987

Résumé

Ferroelectric and dielectric characteristics of two types of SrBi2Nb2O9 thin films grown by pulsed laser deposition on Pt electrodes were determined: a randomly oriented SrBi2Nb2O9 film (sample A), grown on a so-called polycrystalline Pt/Ti/SiO2/Si (Pt/Si) and an epitaxial SrBi2Nb2O9 film (sample B) grown on a (110)Pt electrode epitaxially grown on (110)SrTiO3. Some h00 texturation was suggested by the strong intensity of the 200 diffraction peak in sample A whereas the epitaxial sample B presents a strongly (116) preferential orientation as evidenced by x-ray diffraction and electron channeling patterns. Remanent polarization (Pr) determined from the hysteresis loops recorded on several electrodes on samples A and B was typically in the range of 5–8.5µC/cm2 for both samples. The Curie temperature (Tc) determined from dielectric permittivity measurements versus temperature was 705K, for both samples, which differ, in fact, in structural characteristics but not in composition. The Curie–Weiss temperature was found lower than Tc, suggesting that the transition is of first order. The evolution of dielectric permittivity and dissipation factor was recorded versus frequency at different temperatures. At room temperature and low frequency (100Hz), e' is close to 150 on both films. When increasing the frequency up to 1MHz, the e' value decreased down to 137 for sample A and 129 for sample B. This evolution corresponds to a weak dispersion effect in relation with the high crystallization quality of the ferroelectric films. At the same time, dissipation factor tgd increased from 1.5% to 1.8% and from 3.3% to 5.5% for samples A and B, respectively, when increasing the frequency from 100Hzto1MHz. Further measurements at higher frequency were performed on the epitaxial film. As expected, dielectric permittivity decreased to about 100 when increasing the frequency to 0.5GHz at room temperature, whereas tgd increased up to about 9%. Decreasing the temperature down to 110K contributes to decrease e' from 150 at room temperature to 122 at 110K at 1kHz and from 100 to 87 at 0.5GHz. Simultaneously, tgd decreases from 8.7% to 5.6% at 0.5GHz.
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Dates et versions

hal-00130820 , version 1 (25-05-2022)

Licence

Paternité - Pas d'utilisation commerciale

Identifiants

Citer

Maryline Guilloux-Viry, Jean-René Duclere, A. Rousseau, A. Perrin, D. Fasquelle, et al.. Dielectric characterization in a broad frequency and temperature range of SrBi2Nb2O9 thin films grown on Pt electrodes. Journal of Applied Physics, 2005, 97, pp.114102-1-7. ⟨10.1063/1.1904726⟩. ⟨hal-00130820⟩
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