Carbon nanotube field-effect transistor for GHz operation

The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency F T of 1 GHz, with a slope of -20dB/decade, for the first time

Keywords

CNTFETs Carbon nanotubes Gold Frequency Hafnium Impedance Aluminum oxide Oxidation Self-assembly Coplanar transmission lines

Domains

Engineering Sciences [physics]

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https://hal.science/hal-00128189

Submitted on : Wednesday, January 31, 2007-9:57:18 AM

Last modification on : Friday, April 26, 2024-3:29:38 AM

Dates and versions

hal-00128189 , version 1 (31-01-2007)

Identifiers

HAL Id : hal-00128189 , version 1
DOI : 10.1109/ESSDER.2006.307674

Cite

Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Jean-Sébastien Borghetti, Vincent Derycke, et al.. Carbon nanotube field-effect transistor for GHz operation. European Solid-State Device Research Conference, Sep 2006, Montreux, Switzerland. pp.206-209, ⟨10.1109/ESSDER.2006.307674⟩. ⟨hal-00128189⟩

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