Journal Articles
Journal of Crystal Growth
Year : 2006
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https://hal.science/hal-00127061
Submitted on : Monday, January 29, 2007-9:56:09 AM
Last modification on : Friday, March 24, 2023-2:52:48 PM
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- HAL Id : hal-00127061 , version 1
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D. Vignaud, M. Zaknoune, F. Mollot. Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy. Journal of Crystal Growth, 2006, 291, pp.107-111. ⟨hal-00127061⟩
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