Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

D. Vignaud; M. Zaknoune; F. Mollot

Journal Articles Journal of Crystal Growth Year : 2006

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

(1) , ,

1

D. Vignaud

Function : Author
PersonId : 738856
IdHAL : dominique-vignaud
ORCID : 0000-0002-4863-7858
IdRef : 128829885

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

M. Zaknoune

Function : Author
PersonId : 747548
IdHAL : mohammed-zaknoune
ORCID : 0000-0001-8195-4196
IdRef : 122616073

F. Mollot

Function : Author
PersonId : 754560
IdHAL : francis-mollot

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https://hal.science/hal-00127061

Submitted on : Monday, January 29, 2007-9:56:09 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00127061 , version 1 (29-01-2007)

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HAL Id : hal-00127061 , version 1

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D. Vignaud, M. Zaknoune, F. Mollot. Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy. Journal of Crystal Growth, 2006, 291, pp.107-111. ⟨hal-00127061⟩

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

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