An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications
Résumé
In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivable