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Article Dans Une Revue IEEE Transactions on Nanotechnology Année : 2006

Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements

Résumé

AC performances of carbon nanotube field-effect transistors (CNT-FETs) are analyzed by means of scattering parameters measurements. The active ac properties of CNT-FETs are clearly demonstrated up to 80 MHz and indications of active behavior are obtained up to 1 GHz. From these measurements, a small signal equivalent circuit is proposed and validated up to 10 MHz. The extraction procedure and the determination of the intrinsic ac elements of CNT-FETs are pointed out.
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hal-00126516 , version 1 (25-01-2007)

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Jean-Marc Bethoux, Henri Happy, Alexandre Siligaris, Gilles Dambrine, Jean-Sébastien Borghetti, et al.. Active properties of carbon nanotube field-effect transistors deduced from S parameters measurements. IEEE Transactions on Nanotechnology, 2006, 5 (4), pp.335-342. ⟨10.1109/TNANO.2006.876931⟩. ⟨hal-00126516⟩
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