First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

M. Werquin; N. Vellas; Y. Guhel; D. Ducatteau; B. Boudart; J.C. Pesant; Z. Bougrioua; Marie Germain; Jean-Claude de Jaeger; Christophe Gaquière

Journal Articles Microwave and Optical Technology Letters Year : 2005

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

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M. Werquin

Function : Author

N. Vellas

Function : Author

Y. Guhel

Function : Author

D. Ducatteau

Function : Author

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

B. Boudart

Function : Author
PersonId : 16148
IdHAL : bertrand-boudart
IdRef : 060260092

J.C. Pesant

Function : Author

Z. Bougrioua

Function : Author
PersonId : 180745
IdHAL : zahia-bougrioua
ORCID : 0000-0003-3579-7091
IdRef : 113374135

Marie Germain

Function : Author
PersonId : 170960
IdHAL : marie-germain
ORCID : 0000-0001-7382-1609
IdRef : 176579958

Jean-Claude de Jaeger

Function : Author
PersonId : 747322
IdHAL : jean-claude-dejaeger

Christophe Gaquière

Function : Author
PersonId : 746853
IdHAL : christophe-gaquiere
ORCID : 0000-0003-3082-2489
IdRef : 059765615

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Submitted on : Thursday, January 25, 2007-9:44:28 AM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-00126457 , version 1 (25-01-2007)

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HAL Id : hal-00126457 , version 1

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M. Werquin, N. Vellas, Y. Guhel, D. Ducatteau, B. Boudart, et al.. First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology. Microwave and Optical Technology Letters, 2005, 46, pp.311-315. ⟨hal-00126457⟩

First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology

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