Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2005

Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application

Résumé

Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n +-InP/i- InGaAsP/i-InP/p +-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ g = 1.18 and 1.30 urn, and they were specially designed for 1.55 μm wavelength digital optical switch (DOS) applications. The Quo based heterostructure shows the best potential for high-performance DOS.
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hal-00125658 , version 1 (22-01-2007)

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Malek Zegaoui, Didier Decoster, Joseph Harari, Jean-Pierre Vilcot, F. Mollot, et al.. Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application. Electronics Letters, 2005, 41 (10), pp.613-614. ⟨10.1049/el:20050770⟩. ⟨hal-00125658⟩
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