Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application
Résumé
Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n +-InP/i- InGaAsP/i-InP/p +-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ g = 1.18 and 1.30 urn, and they were specially designed for 1.55 μm wavelength digital optical switch (DOS) applications. The Quo based heterostructure shows the best potential for high-performance DOS.