Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist - Archive ouverte HAL
Article Dans Une Revue Journal of Vacuum Science and Technology Année : 2005

Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist

Emmanuel Dubois
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Dates et versions

hal-00125635 , version 1 (22-01-2007)

Identifiants

  • HAL Id : hal-00125635 , version 1

Citer

G. Larrieu, Emmanuel Dubois. Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N2 chemistry and hydrogen silsesquioxane hard mask resist. Journal of Vacuum Science and Technology, 2005, 23, pp.2046-2050. ⟨hal-00125635⟩
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