1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers

For the first time, an electromechanical resonator based on a blade geometry is proposed. This particular geometry allows self-alignment of the mechanical resonator to its lateral electrodes while achieving high eigenfrequencies in the GHz range.

Mots clés

Silicon Blades Transducers Geometry Electrodes Radio frequency Resonance Voltage Transceivers Energy consumption

Domaines

Sciences de l'ingénieur [physics]

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https://hal.science/hal-00125628

Soumis le : lundi 22 janvier 2007-10:27:49

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Dates et versions

hal-00125628 , version 1 (22-01-2007)

Identifiants

HAL Id : hal-00125628 , version 1
DOI : 10.1109/MEMSYS.2005.1453882

Citer

Vincent Agache, Bernard Legrand, Dominique Collard, Hiroyuki Fujita, Lionel Buchaillot. 1.1 GHz silicon blade nano-electromechanical resonator featuring 20 nm gap lateral transducers. 18th IEEE International Conference on Micro Electro Mechanical Systems, 2005. MEMS 2005, Jan 2005, Miami Beach, United States. pp.121-124, ⟨10.1109/MEMSYS.2005.1453882⟩. ⟨hal-00125628⟩

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CNRS UNIV-VALENCIENNES IEMN UNIV-LILLE

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