Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nano Letters Année : 2007

Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes

Sébastien Berger
G. Cassabois
Philippe Roussignol
  • Fonction : Auteur
  • PersonId : 829954

Résumé

We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to identify two main contributions to the recombination dynamics. The initial fast decay is temperature independent and is attributed to the presence of small residual bundles that create external non-radiative relaxation channels. The slow component shows a strong temperature dependence and is dominated by non-radiative processes down to 40~K. We propose a quantitative phenomenological modeling of the variations of the integrated photoluminescence intensity over the whole temperature range. We show that the luminescence properties of carbon nanotubes at room temperature are not affected by the dark/bright excitonic state coupling.
Fichier principal
Vignette du fichier
Voisin-TR-PL.pdf (504.95 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00123080 , version 1 (08-01-2007)

Identifiants

Citer

Sébastien Berger, C. Voisin, G. Cassabois, C. Delalande, Philippe Roussignol, et al.. Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes. Nano Letters, 2007, 7, pp.398. ⟨hal-00123080⟩
91 Consultations
247 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More