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Article Dans Une Revue Microelectronics Reliability Année : 2006

Gamma radiation effects on RF MEMS capacitive switches

Aurelian Crunteanu
Arnaud Pothier
Pierre Blondy
  • Fonction : Auteur
  • PersonId : 915831
O. Vendier
  • Fonction : Auteur
C. Drevon
  • Fonction : Auteur
J.L. Cazaux
  • Fonction : Auteur

Résumé

Dielectric-based RF MEMS capacitive switches were fabricated and characterized for their response to dielectric charging, thermal storage and cycling and to total dose gamma irradiations. The evolution of the switch electromechanical and RF characteristics (actuation and releasing voltages, insertion losses, isolation) were evaluated as a function of the applied stress (temperature or total ionizing dose). It is indicated that the thermal stress has a relatively minor impact on the switches (the switches remained functional with nearly the same electrical properties). Under our particular test conditions, C(V) and S-parameters measurements show that gamma radiation has low to moderate effects on the components behavior

Dates et versions

hal-00091490 , version 1 (06-09-2006)

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Aurelian Crunteanu, Arnaud Pothier, Pierre Blondy, Frédéric Dumas-Bouchiat, Corinne Champeaux, et al.. Gamma radiation effects on RF MEMS capacitive switches. Microelectronics Reliability, 2006, 46 (9-11), pp.1741-1746. ⟨10.1016/j.microrel.2006.07.065⟩. ⟨hal-00091490⟩
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