Room temperature Strong coupling in low finesse GaN microcavities - Archive ouverte HAL
Communication Dans Un Congrès Année : 2006

Room temperature Strong coupling in low finesse GaN microcavities

Résumé

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Rabi-energy of 50meV at room temperature which is well reproduced with transfer matrix simulations. The absence of strong coupling in the photoluminescence is attributed to the low finesse of the microcavity (Q=60) and is confirmed by simulations which indicate a quality factor of 90 is required to observe strong-coupling in the emission
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Dates et versions

hal-00090384 , version 1 (30-08-2006)

Identifiants

  • HAL Id : hal-00090384 , version 1

Citer

I. R. Sellers, F. Semond, M. Leroux, J. Massies, Pierre Disseix, et al.. Room temperature Strong coupling in low finesse GaN microcavities. 2006, pp.485. ⟨hal-00090384⟩
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