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Journal Articles physica status solidi (b) Year : 2006

Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature

Abstract

We present experimental results demonstrating strong light-matter coupling at room temperature in bulk GaN microcavities grown on silicon(111). Simple low finesse planar microcavities show a Rabi energy as high as 60 meV at room temperature. We also demonstrate room temperature strong-coupling from a bulk GaN microcavity with epitaxial distributive Bragg reflectors (DBRs). Furthermore, for this structure at low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode are clearly resolved for the first time in such a microcavity. At room temperature a Rabi energy of 50 meV is observed, and well reproduced using numerical analysis describing the interaction of both the A and B excitonic states with the photonic mode.
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Dates and versions

hal-00090382 , version 1 (30-08-2006)

Identifiers

  • HAL Id : hal-00090382 , version 1

Cite

I. R. Sellers, F. Semond, M. Leroux, J. Massies, A.-L. Henneghien, et al.. Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature. physica status solidi (b), 2006, 243, pp.1639. ⟨hal-00090382⟩
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