High performance InP-based heterostructure barrier varactors in single and stack configuration
Résumé
Single (SHBV) and dual (DHBV) heterostructure barrier varactors with AlAs/In0.52Al0.48As bolocking conductionlayers have been fabricated and characterized. The devices, whose electrical properties scale with layer complexity, exhibit, for a DHBV scheme, leakage currents as low as 10 A/cm² at 12V, a zero bias capacitance of 1 fF/micro m², and capacitance ratio of 5:1.