Optimization of an Ultra Low Phase Noise Sapphire-SiGe HBT Oscillator Using Nonlinear CAD - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control Année : 2004

Optimization of an Ultra Low Phase Noise Sapphire-SiGe HBT Oscillator Using Nonlinear CAD

Résumé

In this paper, the electrical and noise performances of a 0.8 /spl mu/m silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded Q/sub L/ factor of 75,000.
Fichier non déposé

Dates et versions

hal-00071089 , version 1 (23-05-2006)

Identifiants

Citer

Gilles Cibiel, M. Régis, Olivier Llopis, Abdelali Rennane, Laurent Bary, et al.. Optimization of an Ultra Low Phase Noise Sapphire-SiGe HBT Oscillator Using Nonlinear CAD. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2004, 51 (1), pp.33-41. ⟨10.1109/TUFFC.2004.1268465⟩. ⟨hal-00071089⟩
162 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More