Characterization of rf sputtered TiOySz thin films - Archive ouverte HAL
Article Dans Une Revue Thin Solid Films Année : 2005

Characterization of rf sputtered TiOySz thin films

Résumé

Different titanium oxysulfide thin films were prepared by rf magnetron sputtering using two types of targets in a pure argon or mixed oxygen/argon atmosphere with a total pressure of 1 or 0.2 Pa. We have studied the influence of the sputtering conditions (target, total pressure, oxygen partial pressure) on the composition, the morphology and the local and electronic structure of our thin films. A set of complementary techniques (scanning electron microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS)) was used to characterize the thin films. Two types of films have been obtained: thin films prepared from TiS2 target having a composition and a local structure close to TiS3 and thin films obtained from TiS2/TiS3 target characterized by a composition and a local structure close to TiS2. The complementary use of XPS and sulfur K-edge XAS spectroscopies has allowed us to evidence the coexistence of different microdomains into the thin films corresponding respectively to a pure sulfur, a pure oxygen or a mixed sulfur/oxygen environment.

Dates et versions

hal-00022281 , version 1 (05-04-2006)

Identifiants

Citer

Marie-Hélène Lindic, Brigitte Pecquenard, Philippe Vinatier, Alain Levasseur, Hervé Martinez, et al.. Characterization of rf sputtered TiOySz thin films. Thin Solid Films, 2005, 484 (1-2), pp.113. ⟨10.1016/j.tsf.2005.02.014⟩. ⟨hal-00022281⟩
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