Simulation of the Hall-Petch effect in ultra-fine grained copper. - Archive ouverte HAL
Article Dans Une Revue Materials Science and Engineering Année : 2005

Simulation of the Hall-Petch effect in ultra-fine grained copper.

Résumé

The evolution of the yield and flow stress in polycrystals with characteristic grain sizes ranging from 2 mu m down to 500 nm is studied by two-dimensional dislocation dynamics simulations. The results obtained are consistent with a Hall-Petch relationship. In addition, a linear relation is found between the rate of increase of the dislocation density and the inverse of the grain size. As a consequence, the size effect in this grain size range is found to be governed by the reduction in dislocation mean-free path induced by grain boundaries rather than by dislocation nucleation.
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Dates et versions

hal-00019069 , version 1 (15-02-2006)

Identifiants

  • HAL Id : hal-00019069 , version 1

Citer

Sidonie Lefebvre, Benoît Devincre, Thierry Hoc. Simulation of the Hall-Petch effect in ultra-fine grained copper.. Materials Science and Engineering, 2005, 400, 150-153 (A- Structural Materials Properties Microstructure And Processing). ⟨hal-00019069⟩
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