Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2003

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Résumé

In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical parameter for the HEMT quality and lead to the generation of threading dislocations in the inverse step layers when an excessive arsenic flux is involved.

Dates et versions

hal-00018494 , version 1 (03-02-2006)

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Citer

Yvon Cordier, P. Lorenzini, Jean Michel Chauveau, D. Ferré, Ydir Androussi, et al.. Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs. Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩. ⟨hal-00018494⟩
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