A combined RHEED and photoemission comparison of the GaP and InP (001) (2x4) surface reconstructions - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2002

A combined RHEED and photoemission comparison of the GaP and InP (001) (2x4) surface reconstructions

Résumé

In this work, we compare the (2×4) reconstructions of GaP and InP(0 0 1) surfaces. Two different (2×4) reconstructions are detected by reflection high energy electron diffraction for both materials. Photoemission experiments reveal that the high temperature one is cation-rich whereas the low temperature one is anion-rich. High resolution spectra on the high temperature (2×4) reconstructions exhibit surface components which are in agreement with what is expected from the mixed-dimer model in both cases. As regards the low temperature (2×4) GaP, a second surface component on the P 2p core level line reveals that two different atomic sites exist for the P-atoms at the surface which is different from the β2 (2×4) geometry. The low temperature (2×4) InP is more phosphorus-rich and turns to be a mixture between the (2×1) and the high temperature (2×4) reconstructions.
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Dates et versions

hal-00018492 , version 1 (03-02-2006)

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  • HAL Id : hal-00018492 , version 1

Citer

X. Wallart. A combined RHEED and photoemission comparison of the GaP and InP (001) (2x4) surface reconstructions. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2002, 506 (3), pp.203-212. ⟨hal-00018492⟩
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