Article Dans Une Revue Applied Physics Letters Année : 2003

AlGaAs/GaAs quantum wires with high photoluminescence thermal stability

X. Q. Liu
  • Fonction : Auteur
X. L. Wang
  • Fonction : Auteur
M. Ogura
  • Fonction : Auteur
T. Guillet
R. Grousson
  • Fonction : Auteur
  • PersonId : 830485

Résumé

We report a 5 nm thick V-shaped AlGaAs/GaAs single quantum wire (QWR) that showed high photoluminescence (PL) thermal stability as a result of our recent progress in fabrication techniques. The integrated PL intensity of the QWR sample was quenched only by a factor of about 2.5 when the temperature was increased from 5 to 300 K. This sample also showed higher PL thermal stability over the whole temperature range than a 5 nm thick single quantum well reference sample grown under similar conditions.

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Dates et versions

hal-00016729 , version 1 (10-01-2006)

Identifiants

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X. Q. Liu, X. L. Wang, M. Ogura, T. Guillet, Valia Voliotis, et al.. AlGaAs/GaAs quantum wires with high photoluminescence thermal stability. Applied Physics Letters, 2003, 83, pp.5059. ⟨10.1063/1.1633679⟩. ⟨hal-00016729⟩

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