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Article Dans Une Revue Diamond and Related Materials Année : 1997

Low frequency noise in silicon carbide Schottky diodes

Résumé

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such as barrier height and doping level. The 1/f noise closely follows a model proposed in [T.G.M. Kleinpenning, Solid State Electron. 22 (1979) 121-128] and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.

Dates et versions

hal-00015780 , version 1 (13-12-2005)

Identifiants

Citer

Lorena Anghel, T. Ouisse, T. Billon, P. Lassagne, C. Jaussaud. Low frequency noise in silicon carbide Schottky diodes. Diamond and Related Materials, 1997, Aug. ; 6(10), pp.1494-6. ⟨10.1016/S0925-9635(97)00055-1⟩. ⟨hal-00015780⟩
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