Low frequency noise in silicon carbide Schottky diodes
Résumé
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such as barrier height and doping level. The 1/f noise closely follows a model proposed in [T.G.M. Kleinpenning, Solid State Electron. 22 (1979) 121-128] and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier.