Improvement of current-control induced by oxide crenel in very short field-effect-transistor - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2005

Improvement of current-control induced by oxide crenel in very short field-effect-transistor

Résumé

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film metal-oxide-semiconductor-field-effect-transistor. Our investigation shows that a well adjusted crenel permits an improvement of on-off current ratio Ion/Ioff of about 244% with no detrimental change in the drive current Ion. This remarkable result is explained by a nontrivial influence of crenel on conduction band-structure in thin-film. Therefore a well optimized crenel seems to be a good solution to have a much better control of short channel effects in transistor where the transport has a strong quantum behavior.
Fichier principal
Vignette du fichier
cava_l2mp.pdf (602.68 Ko) Télécharger le fichier
Loading...

Dates et versions

hal-00004546 , version 1 (22-03-2005)

Identifiants

Citer

Nicolas Cavassilas, Marc Bescond, Jean-Luc Autran. Improvement of current-control induced by oxide crenel in very short field-effect-transistor. Applied Physics Letters, 2005, 87, pp.073509. ⟨hal-00004546⟩
103 Consultations
33 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More