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Article Dans Une Revue Thin Solid Films Année : 2000

Ellipsometric investigation of the Si / SiO2 interface formation for application to highly reflective dielectric mirrors

Bruno Gallas
Aline Brunet-Bruneau
  • Fonction : Auteur
  • PersonId : 829945
Gérard Vuye
  • Fonction : Auteur
  • PersonId : 829946
Josette Rivory
  • Fonction : Auteur
  • PersonId : 829947

Résumé

We present a study of the Si/SiO2 interface formation during the growth of Si on SiO2 using in situ ellipsometry measurements performed at one wavelength (λ=0.4 μm). Variable angle X-ray photoelectron spectroscopy (XPS) is also used to confirm the ellipsometric measurements. In situ ellipsometry and XPS provide evidence for the formation of a SiOx (0

Dates et versions

hal-00004512 , version 1 (17-03-2005)

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Bruno Gallas, Serge Fisson, Aline Brunet-Bruneau, Gérard Vuye, Josette Rivory. Ellipsometric investigation of the Si / SiO2 interface formation for application to highly reflective dielectric mirrors. Thin Solid Films, 2000, 377-378, pp.62. ⟨10.1016/S0040-6090(00)01383-3⟩. ⟨hal-00004512⟩
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