Ellipsometric investigation of the Si / SiO2 interface formation for application to highly reflective dielectric mirrors
Résumé
We present a study of the Si/SiO2 interface formation during the growth of Si on SiO2 using in situ ellipsometry measurements performed at one wavelength (λ=0.4 μm). Variable angle X-ray photoelectron spectroscopy (XPS) is also used to confirm the ellipsometric measurements. In situ ellipsometry and XPS provide evidence for the formation of a SiOx (0