Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys - Archive ouverte HAL Access content directly
Journal Articles Journal of Applied Physics Year : 2013

Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys

(1, 2) , (3) , (2) , (2) , (2) , (1) , (2, 4)
1
2
3
4

Abstract

In phase-change materials, the amorphous state resistivity increases with time following a power law q/(t/t0)aRD. This drift in resistivity seriously hampers the potential of multilevel-storage to achieve an increased capacity in phase-change memories. This paper presents the stoichiometric dependence of drift phenomena in amorphous GeSnTe systems (a-GeSnTe) and other known phase-change alloys with the objective to identify low drift materials. The substitution of Ge by Sn results in a systematic decrease of the drift parameter from a-GeTe (alphaRD=0.129) to a-Ge2Sn2Te4 (alphaRD=0.053). Furthermore, with increasing Sn content a decrease in crystallization temperature, trap state density, optical band gap, and activation energy for electronic conduction is observed. In a-GeSnTe, a-GeSbTe, and a-AgInSbTe alloys as well, the drift parameter alphaRD correlates to the activation energy for electronic conduction. This study indicates that low drift materials are characterized by low activation energies of electronic conduction. The correlation found between drift and activation energy of electronic conduction manifests a useful criterion for material optimization.
Not file

Dates and versions

hal-00775944 , version 1 (14-01-2013)

Identifiers

Cite

Jennifer Luckas, Andrea Piarristeguy, G. Bruns, P. Jost, R.M. Schmidt, et al.. Stoichiometry dependence of resistance drift phenomena in amorphous GeSnTe phase-change alloys. Journal of Applied Physics, 2013, 113, pp.023704-7. ⟨10.1063/1.4769871⟩. ⟨hal-00775944⟩
208 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More