Characterization of Structural and Dielectric Properties of Silicon Nitride Thin Films Deposited by PECVD
Résumé
The structural and electrical properties of silicon nitride (SiNx) are influenced by its composition ratio, x. In this study, we examine the characteristics of SiNx films, deposited by plasma-enhanced chemical vapor deposition (PECVD), using Xray photoelectron spectroscopy (XPS), electron microprobe microscopy (EMP), ellipsometry, and high-voltage broadband dielectric spectroscopy (HVBDS). The film composition ranged from N-rich to Si-rich. The dependence of refractive index, permittivity, loss factor and AC conductivity on the SiNx ratio is presented and discussed.
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