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A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor

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hal-03167523 , version 1 (12-03-2021)

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  • HAL Id : hal-03167523 , version 1

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Jiajia Chen, Shiyou Yang, Zhuoxiang Ren. A network topological approach based transient three-dimensional electro-thermal model of insulated gate bipolar transistor. Conference COMPUMAG 2019, Jul 2019, Paris, France. ⟨hal-03167523⟩
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