Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band - Archive ouverte HAL Access content directly
Conference Papers Year : 2011

Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band

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Abstract

Planar Goubau Line (PGL) structures on high resistivity silicon are simulated and measured in the 57-64GHz frequency band. It is shown that the increase of the substrate thickness permits to adapt this line, used at THz frequencies, to this frequency band. Very low losses are attained with a measured average attenuation of 0.064dB/mm on the whole band. Another advantage of the PGL consists in its very simple technological process, as just one level of metallization is necessary. A transition between the PGL and a coplanar waveguide is designed in order to perform on-wafer measurements, and very good agreement is obtained with simulation results for the attenuation of PGL.
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Dates and versions

hal-02194162 , version 1 (25-07-2019)

Identifiers

  • HAL Id : hal-02194162 , version 1
  • OATAO : 24095

Cite

Julien Emond, Marjorie Grzeskowiak, Gaëlle Lissorgues, Stéphane Protat, Frédérique Deshours, et al.. Low loss Goubau Line on high-resitivity silicon in the 57–64 GHz band. 5th European Conference on Antennas and Propagation (EUCAP), Apr 2011, Rome, Italy. pp.1459-1462. ⟨hal-02194162⟩
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