A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Magnetics Year : 2018

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

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Abstract

To consider the nonlinear and 2-D characteristics of the carriers in the draft region of a planar-gate insulated-gate bipolar transistor, which are not properly modeled in the existing physics-based IGBT models, a 2-D ambipolar diffusion equation model is proposed and solved using the finite-element method. Moreover, a numerically iterative procedure is introduced to simply and efficiently solve the 2-D nonlinear finite-element equations. The numerical results of the transient performances obtained using the proposed model and solution methodology show a good agreement with those of the experiment ones, showing the high accuracy and feasibility of the proposed model and method.
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hal-01804864 , version 1 (01-06-2018)

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Jiajia Chen, Jiaqiang Yang, Shiyou Yang, S. L. Ho, Zhuoxiang Ren. A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology. IEEE Transactions on Magnetics, 2018, 54 (3), pp.7001304. ⟨10.1109/TMAG.2017.2771339⟩. ⟨hal-01804864⟩
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