Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2 - Laboratoire Charles Coulomb (L2C)
Journal Articles Physical Chemistry Chemical Physics Year : 2024

Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2

Vincent Astié
Felipe Wasem Klein
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  • PersonId : 1225046
  • IdRef : 255865775
Matthieu Paillet
Jean-Roch Huntzinger
Jean-Louis Sauvajol
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  • PersonId : 1005375
  • IdRef : 079125352
Ahmed Azmi Zahab
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  • PersonId : 872777
Sandrine Juillaguet
Sylvie Contreras
Périne Landois
Jean-Manuel Decams

Abstract

Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS2) on Si/SiO2 substrates by direct liquid injection pulsed-pressure metal–organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS2 showed near stoichiometry (S/Mo = 1.93–1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS2 grown on the same substrates.
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hal-04734922 , version 1 (17-10-2024)

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Vincent Astié, Felipe Wasem Klein, Houssin Makhlouf, Matthieu Paillet, Jean-Roch Huntzinger, et al.. Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2. Physical Chemistry Chemical Physics, 2024, 26 (40), pp.25772-25779. ⟨10.1039/D4CP00603H⟩. ⟨hal-04734922⟩
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