Extended Defects in SiC: Selective Etching and Raman Study - Laboratoire Charles Coulomb (L2C) Access content directly
Journal Articles Journal of Electronic Materials Year : 2023

Extended Defects in SiC: Selective Etching and Raman Study

Abstract

Abstract Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial SiC wafers. For photo-etching, the etch rate increases as the free carrier concentration decreases. The etch rate can be used to estimate the free carrier concentration with higher precision, and over a larger lateral and depth range than that accessed by Raman scattering. The logarithmic dependence of the etch rate on the free carrier concentration has been characterized.

Dates and versions

hal-04214705 , version 1 (27-09-2023)

Identifiers

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J L Weyher, Antoine Tiberj, G. Nowak, J C Culbertson, J A Freitas. Extended Defects in SiC: Selective Etching and Raman Study. Journal of Electronic Materials, 2023, 52 (8), pp.5039-5046. ⟨10.1007/s11664-023-10272-6⟩. ⟨hal-04214705⟩
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