Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature - Archive ouverte HAL Access content directly
Journal Articles Nanomaterials Year : 2022

Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature

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Sergey Dvoretsky
F Teppe

Abstract

Heterostructures with thin Hg(Cd)Te/CdHgTe quantum wells (QWs) are attractive for the development of mid-infrared interband lasers. Of particular interest are room-temperature operating emitters for the short-wavelength infrared range (SWIR, typically defined as 1.7–3 μm). In this work, we report on the observation of stimulated emission (SE) in the 2.65–2.75 µm wavelength range at room temperature in an optically pumped HgCdTe QW laser heterostructure. We study a series of three samples with lengths ranging from 2.5 to 7 mm and discuss the effects related to the non-uniformity of the excitation beam profile. SE threshold intensity and the magnitude of pump-induced carrier heating are found to be effectively dependent on the chip size, which should be accounted for in possible designs of HgCdTe-based optical converters. We also pay attention to the problem of active medium engineering in order to push the SE wavelength towards the 3–5 µm atmospheric window and to lower the SE threshold.
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Origin : Publication funded by an institution

Dates and versions

hal-03824966 , version 1 (24-10-2022)

Licence

Attribution - CC BY 4.0

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Cite

Vladimir Utochkin, Konstantin Kudryavtsev, Alexander Dubinov, Mikhail Fadeev, Vladimir Rumyantsev, et al.. Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature. Nanomaterials, 2022, 12 (15), pp.2599. ⟨10.3390/nano12152599⟩. ⟨hal-03824966⟩
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