Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells - Archive ouverte HAL Access content directly
Journal Articles Physical Review B Year : 2022

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

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hal-03759667 , version 1 (05-10-2022)

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R. Aristegui, F. Chiaruttini, B. Jouault, P. Lefebvre, C. Brimont, et al.. Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells. Physical Review B, 2022, 106 (3), pp.035429. ⟨10.1103/PhysRevB.106.035429⟩. ⟨hal-03759667⟩
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