Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon - Laboratoire Charles Coulomb (L2C) Access content directly
Journal Articles Physical Review Letters Year : 2021

Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

Abstract

We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon- on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1–1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.
Fichier principal
Vignette du fichier
Durand et al. - 2020 - Broad diversity of near-infrared single-photon emi.pdf (802.23 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-03162094 , version 1 (08-03-2021)

Licence

Attribution - NonCommercial - ShareAlike

Identifiers

Cite

Alrik Durand, Yoann Baron, Walid Redjem, T. Herzig, A. Benali, et al.. Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon. Physical Review Letters, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩. ⟨hal-03162094⟩
153 View
142 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More