Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy - Archive ouverte HAL Access content directly
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Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Abstract

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy
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hal-01937537 , version 1 (28-11-2018)

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  • HAL Id : hal-01937537 , version 1

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Julien Brault, Mathieu Leroux, Samuel Matta, Mohamed Al Khalfioui, Benjamin Damilano, et al.. Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan. ⟨hal-01937537⟩
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