Anisotropic magnetization relaxation in ferromagnetic Ga1-xMnxAs thin films - Couches nanométriques : formation, interfaces, défauts Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2008

Anisotropic magnetization relaxation in ferromagnetic Ga1-xMnxAs thin films

Résumé

The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9 GHz) and Q-band (35 GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert damping factor alpha has been determined. At T=4 K we obtain a minimum damping factor of alpha=0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films on the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 and 600 Oe for the layers grown on GaAs and GaInAs substrates, respectively.
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hal-01290157 , version 1 (17-03-2016)

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Kh. Khazen, H. J. Von Bardeleben, M. Cubukcu, Jean-Louis Cantin, V. Novak, et al.. Anisotropic magnetization relaxation in ferromagnetic Ga1-xMnxAs thin films. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78 (19), pp.195210. ⟨10.1103/PhysRevB.78.195210⟩. ⟨hal-01290157⟩
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