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Article Dans Une Revue Journal of Physics: Conference Series Année : 2010

Dilute GaAsN and GaInAsN grown by liquid phase epitaxy

M Milanova
  • Fonction : Auteur
G Koleva
  • Fonction : Auteur
R Kakanakov
  • Fonction : Auteur
P K Vitanov
  • Fonction : Auteur
Z Alexieva
  • Fonction : Auteur
E A Goranova
  • Fonction : Auteur
B Arnaudov
  • Fonction : Auteur
S Evtimova
  • Fonction : Auteur

Résumé

Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560°C − 660°C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.

Dates et versions

hal-01237482 , version 1 (03-12-2015)

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Citer

M Milanova, G Koleva, R Kakanakov, P K Vitanov, Z Alexieva, et al.. Dilute GaAsN and GaInAsN grown by liquid phase epitaxy. Journal of Physics: Conference Series, 2010, 223 (1), pp.012016. ⟨10.1088/1742-6596/223/1/012016⟩. ⟨hal-01237482⟩
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