In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study - Couches nanométriques : formation, interfaces, défauts Accéder directement au contenu
Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2012

In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

Marie d'Angelo
A. Pongracz
  • Fonction : Auteur
B. Pecz
  • Fonction : Auteur
M. G. Silly
  • Fonction : Auteur
F. Sirotti
  • Fonction : Auteur
C. Deville Cavellin
  • Fonction : Auteur

Résumé

We have studied CO interaction with SiO2/Si system at high temperature (similar to 1100 degrees C) and 350 mbar by corelevel photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si -> SiO2 + 2SiC + SiO2C2. (C) 2012 Elsevier B.V. All rights reserved.

Dates et versions

hal-01237475 , version 1 (03-12-2015)

Identifiants

Citer

Marie d'Angelo, Geoffroy Deokar, S. Steydli, A. Pongracz, B. Pecz, et al.. In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩. ⟨hal-01237475⟩
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