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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2010

Intrinsically limited critical temperatures of highly doped Ga1−xMnxAs thin films

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Abstract

Ga1−xMnxAs films with exceptionally high saturation magnetizations of 100 emu/cm3 corresponding to effective Mn concentrations of xef f 0.10 still have a Curie temperature TC smaller than 195 K contradicting mean-field predictions. The analysis of the critical exponent of the remnant magnetization-- =0.407 5 --in the framework of the models for disordered /amorphous ferromagnets suggests that this limit on TC is intrinsic and due to the short range of the ferromagnetic interactions resulting from the small mean-free path of the holes. This result questions the perspective of room-temperature ferromagnetism in highly doped GaMnAs.
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hal-00616759 , version 1 (24-08-2011)

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Kh. Khazen, H. J. von Bardeleben, J. L. Cantin, A. Mauger, Lin Chen, et al.. Intrinsically limited critical temperatures of highly doped Ga1−xMnxAs thin films. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81, pp.235201. ⟨10.1103/PhysRevB.81.235201⟩. ⟨hal-00616759⟩
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