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Communication Dans Un Congrès Année : 2004

Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling

Ian Vickridge
G. Battistig
  • Fonction : Auteur
E. Szilagyi
  • Fonction : Auteur
I. J. Baumvol
  • Fonction : Auteur
C. Radtke
  • Fonction : Auteur
Fc. Stedile
  • Fonction : Auteur

Résumé

We show that on SiC () (the fast-oxidizing carbon face), at 1100 °C and 100 mbar, the oxide exhibits an initial fast growth regime, followed by a constant growth rate confirming previous results that oxide growth is not limited by diffusion of the oxidizing species or reaction products through the oxide. At 1100 °C, in this linear regime, the growth rate also exhibits a linear dependence with oxygen pressure. The silicon face shows sub-linear pressure dependence. A simple oxidation model is ruled out since, on both SiC faces, sequential 16O2/18O2/16O2 oxidations show that oxygen fixed in the oxide, near the SiC/SiO2 interface moves during subsequent growth.

Dates et versions

hal-00005210 , version 1 (07-06-2005)

Identifiants

Citer

I. Trimaille, J.J. Ganem, Ian Vickridge, S. Rigo, G. Battistig, et al.. Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling. the Sixteenth International Conference on Ion Beam Analysis, 2004, France. pp.914-918., ⟨10.1016/j.nimb.2004.01.187⟩. ⟨hal-00005210⟩
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