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Structure: Internal structure identifier : 208909

Characterization of GaN-based HEMTs as Varactor Diode Devices

Abdelaziz Hamdoun , Langis Roy , Mohamed Himdi , Olivier Lafond
45th European Microwave Conference (EuMC), Sep 2015, Paris, France. pp.1268--1271
Conference papers hal-01380040v1
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Characterisation and analytical modeling of GaN HEMT-based varactor diodes

Abdelaziz Hamdoun , L. Roy , Mohamed Himdi , Olivier Lafond
Electronics Letters, 2015, 51 (23), pp.1930-1932. ⟨10.1049/el.2015.2362⟩
Journal articles hal-01300890v1

Characterization of GaN-based HEMTs as Varactor Diode Devices

Abdelaziz Hamdoun , Langis Roy , Mohamed Himdi , Olivier Lafond
10th European Microwave Integrated Circuits Conference (eumic), 2015, Sep 2015, Paris, France. pp.417--420
Conference papers hal-01380043v1