Analysis and Design of X-Band LNA Using Parallel Technique
Abstract
In this paper, a new method based on parallel
amplifier design technique for low noise amplifiers (LNA) is
investigated in order to improve the linearity and noise figure (NF).
Considering two inductively degenerated common source (IDCS)
topology as parallel networks, the minimum noise figure (NFmin)
and optimum noise impedance (Zsopt) and Rn (equivalent noise
resistance) are calculated. Simulation result for the designed 8-11
GHz LNA with the 0.1-μm pseudomorphic GaAs HEMT model
is reported to support proposed theories.