Characterization of GaN-based HEMTs as Varactor Diode Devices - Archive ouverte HAL Access content directly
Conference Papers Year : 2015

Characterization of GaN-based HEMTs as Varactor Diode Devices

(1) , (1) , (2) , (2)
1
2

Abstract

Varactors fabricated in 0.5 mu m and 0.15 mu m GaN HEMT technologies (National Research Council of Canada's GaN500 and GaN150 processes) are investigated. The devices were analyzed and characterized via DC and RF small-signal measurements up to 20 GHz. The drain and source terminals were connected, thus realizing a GaN-based heterojunction barrier varactor diode structure without changing the epitaxial masks and layers of the GaN processes. The CMAX/CMIN ratios are about 2.4 and 3.7, while the maximum cut-off frequencies are 419.2 GHz and 770.6 GHz for GaN500 and GaN150, respectively. The varactors are modeled by a simple physical equivalent circuit, and good agreement is obtained with measurements.
Not file

Dates and versions

hal-01380040 , version 1 (12-10-2016)

Identifiers

  • HAL Id : hal-01380040 , version 1

Cite

Abdelaziz Hamdoun, Langis Roy, Mohamed Himdi, Olivier Lafond. Characterization of GaN-based HEMTs as Varactor Diode Devices. 45th European Microwave Conference (EuMC), Sep 2015, Paris, France. pp.1268--1271. ⟨hal-01380040⟩
76 View
0 Download

Share

Gmail Facebook Twitter LinkedIn More