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Article Dans Une Revue Nanotechnology Année : 2023

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell

Résumé

The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111) B substrate and the resistance of InAs/GaSb core–shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
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Dates et versions

hal-04070480 , version 1 (15-04-2023)

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Wijden Khelifi, Christophe Coinon, M Berthe, David Troadec, G. Patriarche, et al.. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell. Nanotechnology, 2023, 34 (26), pp.265704. ⟨10.1088/1361-6528/acc810⟩. ⟨hal-04070480⟩
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