Mid-wave Infrared sensitized InGaAs using Intraband Transition in Doped Colloidal II-VI Nanocrystals - Institut d'électronique, de microélectronique et de nanotechnologie Accéder directement au contenu
Article Dans Une Revue Journal of Chemical Physics Année : 2023

Mid-wave Infrared sensitized InGaAs using Intraband Transition in Doped Colloidal II-VI Nanocrystals

Adrien Khalili
Tung Huu Dang
Corentin Dabard
Huichen Zhang
Erwan Bossavit
Claire Abadie
Yoann Prado

Résumé

Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of material could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, nanocrystals offer a larger spectral tunability without latticematching constraint. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves detectivity above 10 8 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.
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Dates et versions

hal-04009888 , version 1 (01-03-2023)

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Adrien Khalili, Mariarosa Cavallo, Tung Huu Dang, Corentin Dabard, Huichen Zhang, et al.. Mid-wave Infrared sensitized InGaAs using Intraband Transition in Doped Colloidal II-VI Nanocrystals. Journal of Chemical Physics, 2023, 158 (9), pp.094702. ⟨10.1063/5.0141328⟩. ⟨hal-04009888⟩
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