1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization - Archive ouverte HAL Access content directly
Journal Articles Journal of Physics: Photonics Year : 2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

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Abstract

This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.
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Dates and versions

hal-02949237 , version 1 (25-09-2020)

Identifiers

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Bozhang Dong, Xavier C de Labriolle, Songtao Liu, Mario Dumont, Heming Huang, et al.. 1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization. Journal of Physics: Photonics, 2020, 2, ⟨10.1088/2515-7647/aba5a6⟩. ⟨hal-02949237⟩
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