Frequency comb dynamics of a 13 μm hybrid-silicon quantum dot semiconductor laser with optical injection - Equipe Télécommunications Optiques
Article Dans Une Revue Optics Letters Année : 2019

Frequency comb dynamics of a 13 μm hybrid-silicon quantum dot semiconductor laser with optical injection

Résumé

This work reports on the influence of bias voltage applied on a saturable absorber (SA) on a subthreshold linewidth enhancement factor (LEF) in hybrid-silicon quantum dot optical frequency comb lasers. Results show that the reverse bias voltage on SA contributes to enlarge the LEF and improve the comb dynamics. Optical injection is also found to be able to improve the comb spectrum in terms of 3 dB bandwidth and its flatness. Such novel findings are promising for the development of high-speed dense wavelength-division multiplexing photonic integrated circuits in optical interconnects and datacom applications.
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Dates et versions

hal-02437870 , version 1 (17-01-2020)

Identifiants

Citer

Raymond G Beausoleil, Frédéric Grillot, Bozhang Dong, Heming Huang, Jianan Duan, et al.. Frequency comb dynamics of a 13 μm hybrid-silicon quantum dot semiconductor laser with optical injection. Optics Letters, 2019, 44 (23), pp.5755. ⟨10.1364/OL.44.005755⟩. ⟨hal-02437870⟩
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