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Journal Articles IEEE Journal of Quantum Electronics Year : 2018

Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers

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Abstract

This paper numerically investigates the relative intensity noise of quantum dot lasers through a rate equation model taking into account both the spontaneous emission and carrier contributions. In particular, results show that the carrier noise originating from the ground and excited states significantly enhances the relative intensity noise of the laser, while that from the carrier reservoir does not. Simulations also point out that a large energy interval between the quantum confined levels is more suitable for low-intensity noise operation due to the reduced contribution from the carrier noise in the excited state. Finally, the carrier noise is found to have little impact on the frequency noise, thus being negligible for the investigation of the spectral linewidth. Overall, this paper is useful for designing low-noise quantum dot oscillators for high-speed communications, optical frequency combs, and radar applications. Index Terms-Semiconductor lasers, quantum dots, relative intensity noise, frequency noise.
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Dates and versions

hal-02307220 , version 1 (30-10-2019)

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Cite

Jianan Duan, Xing-Guang Wang, Yue-Guang Zhou, Cheng Wang, Frederic Grillot. Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers. IEEE Journal of Quantum Electronics, 2018, 54 (6), pp.1-7. ⟨10.1109/JQE.2018.2880452⟩. ⟨hal-02307220⟩
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