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Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2022

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas

Résumé

This article first presents quasi- in situ XPS measurements on Si 3 N 4 and a-Si samples after exposure to an SiF 4 /O 2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to the development of a time-multiplexed process for nanoscale etching. This study clearly shows the possibility to switch from a deposition regime to an etching regime by decreasing the temperature. The threshold temperature between these regimes being different for both materials, it was possible to perform selective etching of Si 3 N 4 over a-Si by wisely choosing the temperature.
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Dates et versions

hal-03772077 , version 1 (07-03-2023)

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Gaelle Antoun, Thomas Tillocher, Aurélie Girard, Philippe Lefaucheux, J. Faguet, et al.. Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF 4 /O 2 and Ar plasmas. Journal of Vacuum Science & Technology A, 2022, 40 (5), pp.052601. ⟨10.1116/6.0001885⟩. ⟨hal-03772077⟩
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