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42 Results
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Etude par microscopie à effet tunnel de la croissance épitaxiale de GaP sur substrats Si(001) nominaux et vicinaux pour l’optoélectroniqueRéunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
Conference poster
hal-01497147v1
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Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cellsSolar Energy Materials and Solar Cells, 2021, 221, pp.110888. ⟨10.1016/j.solmat.2020.110888⟩
Journal articles
hal-03031939v1
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Optical losses in GaP microdisks on Si with controlled random polarity17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Conference papers
hal-03402730v1
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Influence des paramètres de croissance de l'homoépitaxie silicium par UHV- CVD sur la reconstruction de surface du siliciumJournées Nanomatériaux, Jan 2020, Rennes, France
Conference poster
hal-02474736v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Conference poster
hal-01497071v1
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A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
Conference papers
hal-01910554v1
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A general III-V/Si growth process descriptionEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
Conference papers
hal-01910535v1
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III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
Conference papers
hal-01910543v1
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III-V/Si photoelectrodes with ambipolar properties5èmes Journées des Carburants Solaires, Sep 2021, Saint Jacut de la Mer, France
Conference papers
hal-03408282v1
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Robust 2D semimetallic inclusions boost performances of III-V/Si heterostructures for water-splitting17è Journées de la Matière Condensée (JMC 17), Aug 2021, Rennes (virtual), France
Conference papers
hal-03402743v1
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Antiphase boundaries in InGaP/SiGe/Si : structural and optical propertiesEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Conference poster
hal-01864388v1
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Optical properties of GaP/Si active microdisks containing InGaAs/GaP quantum dotsNanophotonics and Micro/Nano Optics International Conference 2017 (NANOP 2017), Prem C, Sep 2017, Barcelona, Spain
Conference papers
hal-01707877v1
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GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy31è colloque Journées Surfaces et Interfaces (JSI 2017), Jan 2017, Rennes, France
Conference poster
hal-01715988v1
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GaPSb/Si photoelectrode for Solar Fuel ProductionEuropean COST multsicaleSolar Final meeting, Apr 2019, Sofia, Bulgaria
Conference papers
hal-03102622v1
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Zinc-blende group III-V/group IV epitaxy: Importance of the miscutPhysical Review Materials, 2020, 4 (5), pp.053401. ⟨10.1103/PhysRevMaterials.4.053401⟩
Journal articles
hal-02878985v1
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Structural and optical properties investigation of (In,Ga)As/GaP quantum dots for direct bandgap emission19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Conference poster
hal-01497049v1
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Abrupt GaP/Si hetero-interface using bistepped Si bufferApplied Physics Letters, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
Journal articles
hal-01228809v1
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III-V/Si antiphase boundaries used as 2D-semimetallic topological vertical inclusions for solar hydrogen production21st International Conference on Molecular Beam Epitaxy (IC-MBE 2021), Sep 2021, Mexico (virtual), Mexico
Conference papers
hal-03392254v1
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Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive PropertiesAdvanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Journal articles
hal-03426793v1
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Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si : structural and optical characterizationsInternational Symposium : 20th Anniversary of LPQM, Apr 2019, Cachan, France
Conference poster
hal-02882424v1
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Study of the 3D growth mode of III-V on Si by DFTRéunion plénière du GDR Pulse (PULSE 2017), Oct 2017, Paris, France
Conference poster
hal-01708149v1
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III-V/Si photoelectrodes: a new route for solar hydrogen production11è Journées Scientifiques de Porquerolles (JSP2019), C'Nano-PACA, Sep 2019, Porquerolles, France
Conference papers
hal-02305423v1
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Scanning tunneling microscopy investigation of GaP epitaxial growth on nominal and vicinal Si(001) substrates for optoelectronic applicationsEuropean Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France. 2018
Conference poster
hal-01866135v1
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Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on SiEuropean Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
Conference poster
hal-01497064v1
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A universal mechanism to describe III-V epitaxy on Si20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
Conference papers
hal-02048639v1
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III-V/Si 3D crystal growth: a thermodynamic descriptionEnergy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
Conference papers
hal-01708282v1
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Crystal-polarity engineered gallium phosphide microdisks grown on siliconIOP conference- PHOTON2020, Sep 2020, virtual, United Kingdom
Conference papers
hal-03032794v1
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Scanning tunneling microscopy investigation of GaP MBE growth on nominal and vicinal Si(001) substrates for optoelectronic applications19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Conference poster
hal-01496729v1
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GaPSb/Si tandem material with APBs for efficient overall water splittingJournées Nanomatériaux de Rennes, Jan 2020, Rennes, France
Conference papers
hal-03032905v1
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3D GaP/Si(001) growth mode and antiphase boundaries19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
Conference papers
hal-01497144v1
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